Copper Through-Silicon Vias (Cu-TSVs) are an enabler for 3D integration, allowing vertical stacking of chips to achieve higher performance, reduced form factor, and improved thermal and electrical efficiency. They are critical for advanced applications such as AI, HPC, IoT, and medical imaging, where high bandwidth and compact integration are essential. While Cu-TSV technology is available for 300mm wafer production, it has not been commercially accessible for 200mm wafers—limiting adoption in markets that rely on legacy or specialized processes. Existing 200mm solutions in Europe, use metal vias that are not compatible with CMOS integration or true 3D stacking. The proposed via-last process on thick, self-supported 300–400 µm wafers addresses this gap by enabling Cu-TSVs without the need for carrier wafers. This approach supports integration with thin sensors or MEMS, improves mechanical stability, reduces thermal stress through partial Cu filling, and maintains high electrical performance—offering a scalable, North America-based solution for next-generation heterogeneous integration.