TransEON Inc.
Commercial Scaling of Domestic GaN MOS RF Foundry Processes
Project
Radio frequency (RF) hardware users need higher-performance semiconductor chips. Current commercial gallium nitride (GaN) IC technologies cannot fully meet emerging demands for power, frequency, integration, and differentiation.
As demand grows for RF electronics in 6G, satellite communications, defence, and phased-array radar, Edmonton-based TransEON Inc. will advance its GaN MOS foundry platform from TRL 6 to TRL 8. The project will enable broader commercial access to GaN transistor and monolithic microwave integrated circuit (MMIC) fabrication through multi-project wafer runs.
TransEON will dial-in wafer fabrication and characterization to improve yield and process control, while expanding their PDK with enhanced transistor and passive models, automated design-rule checking, and support for additional CAD workflows. TransEON also plans regular MPW access and an open-access library of tested modular RF IP blocks.
Developed mainly at the University of Alberta nanoFAB in Edmonton, the platform will combine GaN MOS devices, integrated passives, back-end-of-line processes, and 2.5D heterogeneous integration using RF interposers. CEMWorks Inc. will provide electromagnetic co-design support for scaled nodes and RF interposer design.
Technical work includes completing additional processes for deep millimetre-wave applications and refining their RF interposer process for future PDK integration and commercial MPW access, supporting a myriad of emerging applications including prospective 6G and intersatellite links.
Building Canadian capacity
Advances to TransEON’s platform will enhance Canada’s limited domestic RF MMIC fabrication capacity for defence, space, telecommunications and other sectors reliant on imported components. A Canadian GaN foundry platform will provide additional access to RF semiconductor components while supporting local design, prototyping and manufacturing.
Regular MPW access, design tools, and reusable IP will reduce barriers for SMEs, startups, academic teams, and specialized RF developers. TransEON also plans to expand capacity, develop second-source Canadian processes, and grow its workforce through hiring and co-op training.
“FABrIC represents a turning point for Canada’s semiconductor industry. The funding provided through this project will help achieve key milestones required for commercialization of GaN RF technology, unlocking sovereign capabilities for a multitude of mission-critical applications."
—Vallen Rezazadeh, CEO of TransEON Inc.
TransEON Inc.
TransEON is an Edmonton-based startup operating a next-gen, pure-play gallium nitride (GaN) microelectronics foundry for RF, high-temperature, and power applications. Our chips, manufactured entirely in Canada, support a number of mission-critical applications in the defence, space, and telecom sectors. To achieve this, our firm offers end-to-end GaN production capabilities, including fabrication, packaging, test, and failure analysis, enabling one-stop manufacturing of GaN modules for customer hardware. Leveraging cutting-edge GaN technology, our fabrication processes offer RF power density values upwards of 3x higher than competing foundries, delivering enhanced linearity, efficiency, and bandwidth across the RF spectrum.
Project Metrics
TransEON Inc.
Project
Commercial Scaling of Domestic GaN MOS RF Foundry Processes
Targeted Industry/ies
Advanced Manufacturing, Defence and Dual-Use, Digital Technologies
Advanced Manufacturing; Digital Technologies; Electrified / Connected Vehicles; Defence & Security
Type
Process Development
Awarded
September 2026
Location
Edmonton
AB
Funding
$625,137